| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can eliminate fault by surface unevenness of an embedded polycrystalline silicon layer when element isolation is performed by embedding polycrystalline silicon in the trench of a substrate. SOLUTION: When polycrystalline silicon is embedded in the trench 17 of the substrate 10, the unevenness 20 by polysilicon grain exists on the surface of a polycrystalline silicon layer 19. By performing dry etching which mainly has physical sputtering action after formation of the polycrystalline silicon layer 19, a surface convex part is deleted by the physical sputtering action and embedded in a recessed part, so that the surface of the polycrystalline silicon layer 19 is smoothed. COPYRIGHT: (C)2005,JPO&NCIPI
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