| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which the reliability of an element operation can be improved by increasing the read margin and enhancing the accuracy of reading. SOLUTION: This semiconductor memory device is provided with a memory cell array including a plurality of word lines and a plurality of bit lines to which memory cells are connected, a row decoder for generating a word line selection signal in accordance with an address signal and simultaneously selecting two word lines adjacent to each other among the plurality of word lines, a column decoder for selecting each desired bit line among the plurality of bit lines, and a plurality of sense amplifiers for reading data respectively stored in each memory cell selected by the row decoder and the column decoder. COPYRIGHT: (C)2005,JPO&NCIPI
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