| 摘要 |
PROBLEM TO BE SOLVED: To provide a furnace for manufacturing an SiC single crystal in which the polycrystallization of the SiC single crystal can be prevented by suppressing excess degree of supersaturation and optimizing the degree of supersaturation. SOLUTION: In the furnace for manufacturing the SiC single crystal, wherein the SiC single crystal is grown from an SiC seed crystal as a starting point, which is held just below the surface of an Si melt, while maintaining a temperature gradient such that the temperature becomes lower toward the surface of the melt from the inside, in the Si melt accommodated in a graphite crucible, a part just above the melt surface is covered with at least one of a black lead cover or a graphite cover so as to be thermally insulated. COPYRIGHT: (C)2005,JPO&NCIPI
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