发明名称 |
Method and apparatus to remotely sense the temperature of a power semiconductor |
摘要 |
Apparatus for indirectly sensing the temperature of a power MOS device comprising a power MOS device having a current sense circuit for sensing the current in the power MOS device, a circuit for producing a voltage related to the drain-source voltage of the power MOS device, a comparator coupled to receive at a first input the voltage related to the drain-source voltage of the power MOS device and at a second input a voltage related to the current in the power MOS device, the comparator generating an overtemperature protection signal when a predetermined inequality between the voltages at the first and second inputs to the comparator occurs.
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申请公布号 |
US2004227545(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20030625031 |
申请日期 |
2003.07.22 |
申请人 |
INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
NADD BRUNO C.;THIERY VINCENT |
分类号 |
G01K1/02;G01K3/00;G01K7/01;G01R31/26;H03K5/153;(IPC1-7):H03K5/153 |
主分类号 |
G01K1/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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