发明名称 |
NANOLAYER DEPOSITION PROCESS |
摘要 |
A hybrid deposition process of CVD and ALD, called NanoLayer Deposition ("NLD") is provided. The NLD process is a cyclic deposition process, comprising the first step (40) of introducing a first plurality of precursors to deposit a thin film with the deposition process not self-limiting, then a second step (41) of purging the first set of precursors and a third step (42) of introducing a second plurality of precursors to modify the deposited thin film. The deposition step in NLD is not self-limiting and is a function of substrate temperature and process time. The second set of precursors modifies the already-deposited film characteristics. The second set of precursors can treat the deposited film such as modification of film composition, a doping, or a removal of impurities. The second set of precursors can also deposit another film. The additional layer can react with the existing layer to form a compound layer, or can minimally react to form a nanolaminate film. |
申请公布号 |
WO2004070074(A3) |
申请公布日期 |
2004.11.18 |
申请号 |
WO2004US03349 |
申请日期 |
2004.02.04 |
申请人 |
TEGAL CORPORATION;NGUYEN, TUE;NGUYEN, TAI, DUNG |
发明人 |
NGUYEN, TUE;NGUYEN, TAI, DUNG |
分类号 |
C23C16/44;C23C16/455;C23C16/56;(IPC1-7):C23C16/00 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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