| 摘要 |
PROBLEM TO BE SOLVED: To provide a multiwavelength semiconductor laser having a common low-reflective film at emission end faces, which exhibits predetermined reflectance over an emission wavelength of each semiconductor laser element. SOLUTION: The multiwavelength semiconductor laser 10 comprises, on a common substrate, a first resonator structure 12 of end face emission type having an emission wavelength of 650nm, and a second resonator structure 14 of end face emission type having an emission wavelength of 780nm interposed by a separator region 11 therebetween. The emission end faces of the first and the second resonator structures 12 and 14 are provided with the low-reflective film 22 consisting of three dielectric layer films in which a first Al<SB>2</SB>O<SB>3</SB>film 16 of 60nm thick, a TiO<SB>2</SB>film 18 of 55nm thick whose refractive index is smaller than those of the first and second Al<SB>2</SB>O<SB>3</SB>films 16, 20, and the second Al<SB>2</SB>O<SB>3</SB>film 20 of 140nm thick, are sequentially formed from the inside to the outside. COPYRIGHT: (C)2005,JPO&NCIPI
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