| 摘要 |
PROBLEM TO BE SOLVED: To provide a dry etching method wherein reproducibility of etching rate is good and execution is enabled by small man day and low cost in a dry etching method in which a semiconductor substrate is etched perpendicularly by alternately changing etching gas and passivation formation gas. SOLUTION: In the dry etching method wherein the semiconductor substrate 1 is etched perpendicularly by alternately changing the etching gas (SF<SB>6</SB>) and passivation formation gas (C<SB>4</SB>F<SB>8</SB>), gas flow rate of the etching gas (SF<SB>6</SB>) and the passivation formation gas (C<SB>4</SB>F<SB>8</SB>) is controlled by mass flowmeters 7a, 7b, and valve opening and closing reaction time in the mass flowmeter 7a of the etching gas (SF<SB>6</SB>) is set to be a specified target time. COPYRIGHT: (C)2005,JPO&NCIPI
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