发明名称 Ag-Bi-base alloy sputtering target, and method for producing the same
摘要 The sputtering target made of a Ag-Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %<-1 >or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
申请公布号 US2004226818(A1) 申请公布日期 2004.11.18
申请号 US20040844345 申请日期 2004.05.13
申请人 KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE, INC. 发明人 TAKAGI KATSUTOSHI;NAKAI JUNICHI;TAUCHI YUUKI;SATO TOSHIKI;MATSUZAKI HITOSHI;FUJII HIDEO
分类号 C22F1/14;B32B3/02;C22C5/00;C22C5/06;C22C12/00;C22F1/00;C23C14/06;C23C14/14;C23C14/34;G11B7/24;G11B7/258;G11B7/26;H01L21/285;(IPC1-7):B32B3/02 主分类号 C22F1/14
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