发明名称 |
Ag-Bi-base alloy sputtering target, and method for producing the same |
摘要 |
The sputtering target made of a Ag-Bi-base alloy contains Bi in solid solution with Ag. The sputtering target has an intensity of precipitated Bi of 0.01 at %<-1 >or less, as calculated by the following mathematical expression (1) based on analysis results of X-ray diffraction, and/or a sum of area ratios of predetermined intensities (third to sixth intensities in 8 intensities) of 89% or more, wherein the area ratios are obtained by calculating a planar distribution of characteristic X-ray intensities of Bi according to X-ray microanalysis: intensity of precipitated Bi=[IBi(102)/IAg(111)+IAg(200)+IAg(220)+IAg(311))]/[Bi]. Remarkable lowering of the yield of Bi content in resultant films can be suppressed by using the sputtering target.
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申请公布号 |
US2004226818(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20040844345 |
申请日期 |
2004.05.13 |
申请人 |
KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE, INC. |
发明人 |
TAKAGI KATSUTOSHI;NAKAI JUNICHI;TAUCHI YUUKI;SATO TOSHIKI;MATSUZAKI HITOSHI;FUJII HIDEO |
分类号 |
C22F1/14;B32B3/02;C22C5/00;C22C5/06;C22C12/00;C22F1/00;C23C14/06;C23C14/14;C23C14/34;G11B7/24;G11B7/258;G11B7/26;H01L21/285;(IPC1-7):B32B3/02 |
主分类号 |
C22F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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