发明名称 SEMICONDUCTOR MEMORY APPARATUS FOR TRANSMITTING DATA IN HIGH SPEED
摘要 A semiconductor memory device is provided to minimize a circuit configuration by supplying a data pattern for a reading operation to an input/output line by a multiplex circuit. A data multiplex part(200) delivers one among a data training pattern and data delivered through a global input/output line in response to a training control signal. A latch(220) latches a value outputted from the data multiplex part, and supplies a latched value to the global input/output line. The data multiplex part includes a first transmission gate, a second transmission gate, and an inverter. The first transmission gate passes the data in response to the training control signal. The second transmission gate passes the data training pattern in response to the training control signal. The inverter inverts the training control signal, and controls the first transmission gate and the second transmission gate by an inverted control signal.
申请公布号 KR20090023815(A) 申请公布日期 2009.03.06
申请号 KR20070088871 申请日期 2007.09.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 BAE, JI HYAE;YOON, SANG SIK
分类号 G11C7/10 主分类号 G11C7/10
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