| 发明名称 |
SEMICONDUCTOR ELEMENT AND ITS MANUFACTURING METHOD |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor element which can realize a conductive path for connecting the front and the rear of a semiconductor substrate using implanting of local impurity by ion implantation, local diffusion of an impurity by laser beam irradiating; and to provide a method for manufacturing the same. <P>SOLUTION: The conductive path for connecting the front and the rear of the semiconductor substrate is realized by a step of ion implanting an oxygen in a hollow cylindrical state on the surface of the semiconductor substrate 1, a step of forming a cylindrical insulating part 6 in the semiconductor substrate by heat treating the ion implanted oxygen at a predetermined temperature, a step of ion implanting a phosphorus on the surface of the hollow part of the cylindrical insulating part of the semiconductor substrate, and a step of forming a columnar conductive part 11 on the hollow part of the cylindrical insulating part 6 in the semiconductor substrate by heat treating the ion implanted phosphorus at a predetermined temperature. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2004327618(A) |
申请公布日期 |
2004.11.18 |
| 申请号 |
JP20030118736 |
申请日期 |
2003.04.23 |
| 申请人 |
MITSUBISHI ELECTRIC CORP;SONY CORP;FUJITSU LTD |
发明人 |
NEMOTO YOSHIHIKO;YONEMURA HITOSHI;HOSHINO MASATAKA |
| 分类号 |
H01L21/28;H01L21/265;H01L21/3205;H01L23/52;H01L25/065;H01L25/07;H01L25/18 |
主分类号 |
H01L21/28 |
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