| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a thin film resistor that is increased in specific resistance, reduced in temperature coefficient of resistance, and improved in toughness, ductility, and adhesive property to substrate as compared with the conventional metal-based thin film resistor, and to provide a method of forming the resistor. <P>SOLUTION: This thin film resistor is composed of an Fe-V-Al-based alloy film formed on the surface of a substrate having an electrical insulation property. The Fe-V-Al-based alloy contains Fe as the main component and V and Al as accessory components at rates of 10-15 wt% and 12-16 wt%, respectively. In addition, the Fe-V-Al-based alloy film has a film thickness of 0.05-5.0μm. In the method of forming the thin film resistor, the resistor is formed by forming the alloy film on the surface of the substrate by means of a film forming device in an argon atmosphere by using a target composed of Fe, V, and Al. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
