| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing composite semiconductor substrate by which the slipping or dislocations of single-crystal semiconductor layers and the formation of lattice defects, HF defects, etc., in the semiconductor layers can be prevented. SOLUTION: The method of manufacturing a composite semiconductor substrate 600 constituted by sticking a semiconductor substrate provided with a single-crystal semiconductor layer to a supporting substrate 500 includes a sticking step of producing a laminated substrate by sticking the semiconductor substrate to the supporting substrate 500, a hydrogen ion implanting step of implanting hydrogen ions into a prescribed region (no-element forming region) 230 of the single-crystal semiconductor layer in the laminated substrate, and a heat-treating step of heat-treating the laminated substrate after the hydrogen ions are implanted. COPYRIGHT: (C)2005,JPO&NCIPI |
