发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT AND VOLTAGE BOOSTING METHOD USING SAME
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit that has no parasitic motion such as latch-up and outputs a DC voltage boosted by a clock input signal, and a voltage boosting method using the same. SOLUTION: The voltage boosting circuit comprises: a first boosting circuit part 1a composed of a diode-connected transistor TR1 and a capacitor C1; a second boosting circuit part 1b composed of a diode-connected transistor TR2 and a capacitor C2; a (n-1)th boosting circuit part 1c composed of a diode-connected transistor TRN-1 and a capacitor CN-1; an n-th boosting circuit part 1d composed of a diode-connected transistor TRN; and a charge pump boosting circuit 2 composed of counters 3, 4. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004328901(A) 申请公布日期 2004.11.18
申请号 JP20030120362 申请日期 2003.04.24
申请人 TOSHIBA MICROELECTRONICS CORP;TOSHIBA CORP 发明人 MIURA HIRONORI;TANABE TAKESHI;AMANO KATSUMOTO;ITO YUICHI;SATO JUN;TAKASE HIDEKI;HINAKO TAKESHI
分类号 H01L27/04;H01L21/822;H02M3/07;(IPC1-7):H02M3/07 主分类号 H01L27/04
代理机构 代理人
主权项
地址