METHOD OF MANUFACTURING SUPERCONDUCTING OXIDE THIN FILM DEVICE AND SUPERCONDUCTING OXIDE THIN FILM DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing superconducting oxide thin film device by which a superconducting oxide thin film having a good c-axis orientation can be formed even when buffer layers are formed in thick layers. SOLUTION: A thick CeO2first buffer layer 2 contains a (111)-facet, and an Sm2O3second buffer layer 4 caused to deposit on the first buffer layer 2 is grown as crystal grains smaller than CeO2crystal grains by one figure or more. A thin EBCO film 5 is grown on the fine crystal grains. The superconducting thin film composed of such ideal crystal grains has a very high superconductive critial current density (Jc) as well as a very high superconductive critical temperature (Tce). COPYRIGHT: (C)2005,JPO&NCIPI