| 摘要 |
PROBLEM TO BE SOLVED: To enhance calculation accuracy of the drain current of an MOS transistor. SOLUTION: At first, a model formula of stress is obtained in the longitudinal direction of the channel of an MOS transistor having parameters of the length and width of an active region and in the lateral direction perpendicular thereto. Based on the length and width of the active region of an MOS (metal oxide semiconductor) transistor for calculating the drain current and the model formula of stress, mobility is calculated when a stress acts in the active region. Drain current is calculated using the mobility when a stress acts. COPYRIGHT: (C)2005,JPO&NCIPI
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