| 摘要 |
PROBLEM TO BE SOLVED: To provide a mapping projection electron beam device with high resolution and high throughput in which a sample can be irradiated by a face beam. SOLUTION: The mapping projection system electron beam device EBI which can irradiate the sample W by a primary electron to form the face beam is equipped with an electron gun EG to eject the primary electron, a primary optical system 2 to adjust a beam shape of the primary electron from the electron gun EG, a Vienna filter 3 to change a traveling direction of the primary electron which has passed through the primary optical system 2, a lens system 5 to adjust the beam form of the primary electron from the Vienna filter 3 and to irradiate the sample W by means of the face beam, secondary optical systems 6, 7 to guide a secondary electron ejected from the sample W, and a secondary electron detection system 8 to detect the secondary electron from the secondary optical systems. COPYRIGHT: (C)2005,JPO&NCIPI
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