| 发明名称 |
SPUTTERING TARGET SUPERIOR IN SPUTTERING CRACK RESISTANCE FOR FORMING PHASE-CHANGE MEMORY FILM |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a sputtering target superior in sputtering crack resistance for forming a phase-change memory film. <P>SOLUTION: This target has a composition, by atomic%, 20-30% Ge, 20-30% Sb, 0.3-1.5% oxygen and the balance Te with unavoidable impurities. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
| 申请公布号 |
JP2004323919(A) |
申请公布日期 |
2004.11.18 |
| 申请号 |
JP20030120933 |
申请日期 |
2003.04.25 |
| 申请人 |
MITSUBISHI MATERIALS CORP |
发明人 |
KINOSHITA HIROSHI;NONAKA SOHEI;MORI AKIRA |
| 分类号 |
C23C14/34;C22C28/00;G11B7/24;G11B7/243;G11B7/26 |
主分类号 |
C23C14/34 |
| 代理机构 |
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