| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device which is high in resistance to electrostatic electricity penetration of an internal circuit and kept high in reliability. SOLUTION: Interconnecting lines 12a and 12b are located in a first wiring layer and provided adjacent to each other through a gap G0. Projections ZTa and ZTb are provided to the interconnecting lines 12a and 12b respectively to decrease the gap (isolation distance) G0 partially to a gap G1. Furthermore, interconnecting lines 16a and 16b as dummy interconnecting lines are electrically and physically connected to the projections ZTa and ZTb by the use of a second wiring layer. COPYRIGHT: (C)2005,JPO&NCIPI
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