| 摘要 |
PROBLEM TO BE SOLVED: To drastically improve the yield of elements, and to make it easy to adjust the production conditions in the production of a device. SOLUTION: An Si-doped gallium arsenide substrate manufactured by a vertical Bridgman method or a vertical temperature gradient freezing method has a carrier concentration in the range of 0.1×10<SP>18</SP>-5.0×10<SP>18</SP>/cm<SP>3</SP>and is characterized in that the dispersion of the maximum value and the minimum value of the carrier concentration within the substrate surface is lower than 10% of the average carrier concentration within the substrate surface. In this case, it is preferable that the distance between the center of a growth streak having a nearly circular annual ring-like shape, which shows an equal carrier concentration within the substrate surface, and the center of the substrate is≤1/20 of the substrate diameter. Further, it is preferable that the average value of the dislocation density is≤5,000 pieces/cm<SP>2</SP>. COPYRIGHT: (C)2005,JPO&NCIPI
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