发明名称 |
Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device |
摘要 |
A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
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申请公布号 |
US2004226503(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20040765502 |
申请日期 |
2004.01.28 |
申请人 |
IWATA HIROKAZU;SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;AOKI MASATO |
发明人 |
IWATA HIROKAZU;SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;AOKI MASATO |
分类号 |
C30B11/00;(IPC1-7):C30B1/00 |
主分类号 |
C30B11/00 |
代理机构 |
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代理人 |
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地址 |
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