发明名称 Method of growing group III nitride crystal, group III nitride crystal grown thereby, group III nitride crystal growing apparatus and semiconductor device
摘要 A method of growing a group III nitride crystal grows a group III nitride crystal from a solution in which an alkaline metal, a group III metal and nitrogen are dissolved, and includes, in the solution, a material which increases solubility of the nitrogen into the solution.
申请公布号 US2004226503(A1) 申请公布日期 2004.11.18
申请号 US20040765502 申请日期 2004.01.28
申请人 IWATA HIROKAZU;SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;AOKI MASATO 发明人 IWATA HIROKAZU;SARAYAMA SEIJI;YAMANE HISANORI;SHIMADA MASAHIKO;AOKI MASATO
分类号 C30B11/00;(IPC1-7):C30B1/00 主分类号 C30B11/00
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