| 发明名称 |
Method of eliminating drift in phase-change memory |
| 摘要 |
A method of operating a electrically programmable phase-change memory element. The method includes the step of applying an electrical signal to memory element which is sufficient to return the memory element to its pre-drift resistance state.
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| 申请公布号 |
US2004228159(A1) |
申请公布日期 |
2004.11.18 |
| 申请号 |
US20030437134 |
申请日期 |
2003.05.13 |
| 申请人 |
KOSTYLEV SERGEY A.;CZUBATYJ WOLODYMYR;LOWREY TYLER |
发明人 |
KOSTYLEV SERGEY A.;CZUBATYJ WOLODYMYR;LOWREY TYLER |
| 分类号 |
G11C11/00;G11C16/02;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/00 |
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