| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a phase-change recording film with a high electric resistance and a sputtering target for forming the phase-change recording film. <P>SOLUTION: The phase-change recording film has a composition consisting of, by atomic percentage, 15-30% of Ge, 15-25% of Sb, a total of 0.1-13% of one or both of Al and Si, and the balance made of Te and unavoidable impurities. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
