| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of forming the buried layer of a semiconductor device which is capable of easily forming the buried layer of the discrete semiconductor device provided with a high-concentration silicon substrate with high accuracy. SOLUTION: The method of forming the buried layer comprises processes of forming a first certain conductivity-type epitaxial layer on a certain conductivity-type high-concentration semiconductor substrate, introducing high-concentration impurities into the surface of the first certain conductivity-type epitaxial layer, and forming a second certain conductivity-type epitaxial layer on the first certain conductivity-type epitaxial layer and forming the buried layer by diffusing the high-concentration impurities into it. COPYRIGHT: (C)2005,JPO&NCIPI |
