| 摘要 |
PROBLEM TO BE SOLVED: To provide a remover composition capable of effectively removing the deposit produced after ashing, particularly the deposit derived from titanium and produced during the formation of a via hole and not corrosive to wiring and insulating materials such as titanium on a hole bottom, titanium nitride and aluminum, and to provide a method for manufacturing a semiconductor substrate or device using the remover composition. SOLUTION: The remover composition comprises one or more sulfates selected from the group comprising ammonium sulfate, quaternary ammonium sulfates and sulfuric acid-amine salts, an oxidizing agent and water and has pH 1-10. The method for manufacturing a semiconductor substrate or device includes a step of cleaning a semiconductor substrate or device using the remover composition. Since the remover composition has excellent removing power to a deposit of aluminum wiring produced during formation of a semiconductor device and a deposit derived from titanium on a via hole bottom and also has excellent anticorrosiveness to a wiring metallic material and an insulating material, by using the remover composition, electronic parts of excellent quality such as LCD, memory and CPU can be manufactured. COPYRIGHT: (C)2005,JPO&NCIPI |
