发明名称 |
Manufacturing method of semiconductor device |
摘要 |
Cost is reduced and reliability is improved with a CSP type semiconductor device. A glass substrate which works as a supporting plate is bonded through an adhesive to a first surface of a semiconductor wafer on which first wirings are formed. Thickness of the semiconductor wafer is reduced by back-grinding the semiconductor wafer on a second surface of the semiconductor wafer which is opposite to the first surface of the semiconductor wafer. The semiconductor wafer is wet-etched to remove bumps and dips on the second surface of the semiconductor wafer caused during the back-grinding. Then the second surface of the semiconductor wafer is etched to form a tapered groove. The semiconductor wafer is wet-etched to reduce bumps and dips caused by the etching and round a corner of the groove. The wet-etching improves coverage of insulation film, wiring and protection film and enhances yield and reliability of the semiconductor device.
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申请公布号 |
US2004229445(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20040784888 |
申请日期 |
2004.02.24 |
申请人 |
SANYO ELECTRIC CO., LTD. |
发明人 |
SUZUKI AKIRA;NOMA TAKASHI;SHINOGI HIROYUKI;TAKAO YUKIHIRO;ISHIBE SHINZO;OTSUKA SHIGEKI;YAMAGUCHI KEIICHI |
分类号 |
H01L23/12;H01L21/304;H01L21/78;H01L23/31;H01L23/482;(IPC1-7):H01L21/30 |
主分类号 |
H01L23/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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