PLASMA ETCHING CHAMBER AND PLASMA ETCHING SYSTEM USING SAME

摘要

A plasma etching chamber wherein, when the film deposited on the peripheral part of a wafer and particles are dry-cleaned by plasma etching, the plasma is produced in the region from the top portion of the peripheral part of the wafer to the bottom portion so as to completely clean the peripheral part of the wafer. The plasma etching chamber has a structure in which a pair of anodes vertically opposed to each other are provided to the peripheral part of a waver to which a radio frequency is applied through a cathode or a structure in which a cathode and an anode are vertically opposed to each other at the peripheral part of a wafer and the peripheral portions of the gaps facing to each other are sealed with a view ring. Further a plasma etching system is disclosed. In the plasma etching system, plasma etching chambers having such a structure are arranged. A general handler receives series of cassettes, or take a wafer out of a load port. The posture of the wafer is corrected with respect to the OF position by a wafer aligning unit. The wafer is loaded through a load rack chamber or directly into a plasma etching chamber. The etched wafer is taken out by a handler and placed through the load rack chamber or directly into the cassette or load port.