| 摘要 |
PROBLEM TO BE SOLVED: To dissipate Joule's heat being generated in a region between current block layers. SOLUTION: In a semiconductor laser element 10A where a substantially trapezoidal ridge part 19 is formed by laying a p-type second clad layer 17 and a p-type contact layer 18 on a double hetero structure consisting of an n-clad layer 13, an active layer 14 and a p-type first clad layer 15 and a pair of n-type current block layers 20A and 20A are formed on the opposite sides of the ridge part 19, the pair of n-type current block layers 20A and 20A are formed by laying a plurality of compound layers (AlAs) and (GaAs) using a plurality of element materials (AlGaAs) wherein the plurality of compound layers contain the plurality of element materials entirely and at least one compound layer containing reduced number of elements is included in the plurality of compound layers. COPYRIGHT: (C)2005,JPO&NCIPI
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