| 摘要 |
PROBLEM TO BE SOLVED: To prevent the degradation of flatness of epitaxial film surface that is to be a problem for epitaxial growth processing combined with indirect heating by high-frequency induction heating or resistance heating and a plurality of sheets simultaneous processing, and to block the movement of a wafer on a susceptor. SOLUTION: The susceptor 3 that is like a horizontal disc turning around a vertical axis and is provided with a plurality of recessed parts 7 housing wafers 8 around the rotary center of the upper surface of the disc is heated by high-frequency induction heating or resistance heating. Thus, the respective wafers 8 housed within the recessed parts 7 are indirectly heated at the same time to form epitaxial films on the upper surfaces of the wafers 8. A through hole 9 penetrating the rear side is formed at only the central parts of the inner bottom surfaces of the recessed parts 7. The diameter of the through hole 9 is limited within 2 mm. COPYRIGHT: (C)2005,JPO&NCIPI
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