| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which can achieve a proper prescribed gate breakdown voltage even if there is a notch in a gate oxide film and the oxide film in the notch is made thin, and therefore hardly have gate characteristic defects. SOLUTION: The semiconductor device comprises a well region of a second conductivity type which is selectively formed in the front surface of the semiconductor layer of a first conductivity type, field oxide film covering the front surface of a pn junction between the semiconductor layer and the well region, trench which is formed from the front surface of the well region and is extended through the well region and reaches the semiconductor layer, gate oxide film covering an inner surface of the trench, gate electrode embedded in the trench via the gate oxide film, and source regions which are selectively formed so as to be in contact with both sides in the longitudinal direction of the stripe geometry of the trench on the front surface of the well region. An interlayer insulation film is so formed as to be in contact with a part above the proximity to the boundary between the field oxide film and an extended part of the gate oxide film. COPYRIGHT: (C)2005,JPO&NCIPI
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