发明名称 |
SUBSTRATE PROCESSING APPARATUS |
摘要 |
<p>A substrate processing apparatus (10A) using a microwave plasma is disclosed wherein an inner partition wall (15) is provided within a process chamber (11) so that the inside of the process chamber (11) is divided into a space (11A) where a substrate to be processed is housed and a space (11B) which is defined by the inner partition wall (15) and the outer wall of the process chamber (11). By having such a structure, contamination of the substrate by a gas separated from the sealing material and contamination of the substrate caused by abnormal discharge can be prevented, thereby enabling clean processing of the substrate.</p> |
申请公布号 |
WO2004100248(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
WO2004JP05977 |
申请日期 |
2004.04.26 |
申请人 |
OHMI, TADAHIRO;HIRAYAMA, MASAKI |
发明人 |
OHMI, TADAHIRO;HIRAYAMA, MASAKI |
分类号 |
H01L21/00;H01L21/205;H01L21/3065;C23C16/511;H01J37/32;(IPC1-7):H01L21/31;H05H1/46;H01L21/306 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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