NONVOLATILE SEMICONDUCTORMEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device capable of accelerating the operating speed.

SOLUTION: A flash memory 10 comprises: a plurality of memory cells MC including a first MOS transistor MT provided with a charge storage layer and a control gate and a second MOS transistor ST, wherein one end of a current path is connected to one end of a current path of the first MOS transistor MT; and a plurality of local bit lines LBL to which the other end of the current path of the first MOS transistor of the plurality of memory cells MC is respectively connected. Also, the flash memory 10 is provided with: global bit lines WGBL and RGBL for connecting the plurality of local bit lines LBL in common; a first switching element SEL for connecting the local bit lines LBL and the global bit lines WGBL and RGBL; and a holding circuit 60 which is connected to the global bit line WGBL and holds write data to the memory cells MC.

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