| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a high breakdown voltage in which a leak current can be reduced when a reverse voltage is applied while sustaining the on resistance without requiring ion implantation and high temperature heat treatment incident thereto. SOLUTION: In the semiconductor device having a cathode region 2 of semiconductor substrate, an anode electrode 4 of such a metal material as forming a specified Schottky barrier for making Schottky connection with the cathode region 2, and a cathode electrode 5 touching the cathode region 2 but not touching the anode electrode 4, an anode region 3 touches the cathode region 2 on the periphery of Schottky junction plane of the cathode region 2 and the anode electrode 4, and the anode region 3 comprises a hetero semiconductor having a band gap different from that of the cathode region 2 and forming a hetero barrier lower than the Schottky barrier together with the cathode region 2. COPYRIGHT: (C)2005,JPO&NCIPI |
