| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser having high joint efficiency with an optical fiber in which a luminous point position is controlled with a high degree of accuracy by reducing variation of an active layer stripe at etching. SOLUTION: An n-InP substrate 1 is overlaid with an n-(Al<SB>x</SB>Ga<SB>1-x</SB>)<SB>y</SB>In<SB>1-y</SB>As<SB>z</SB>P<SB>1-z</SB>etching stop layer 14 (0<x, y<1, xy=0.4, z=1), an n-InP cladding layer 2, an active layer 3 containing a distorting quantum well and a p-InP first clad layer 4 is formed to make a double hetero structure. The double hetero structure is etched into a ridge-like stripe pattern until reaching the etching stop layer 14. COPYRIGHT: (C)2005,JPO&NCIPI
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