| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and the manufacturing method of the same, having no restriction on pattern layout, on the kind of employed etching solution or the like, and is provided with a bipolar transistor capable of being manufactured by suppressing generation of mesa-shaped abnormalities. SOLUTION: The semiconductor device is constituted of semiconductor mesa structure bodies (EM,BM,SM), comprising the laminate of a collector layer 12; a base layer 13 and an emitter layer 14 in a substrate 10 and is formed so as to function as the operating region of a bipolar transistor; mesa structure bodies (PBM, PSM) for a base contact pad, which are formed so as to be apart from the semiconductor mesa structure bodies by a predetermined distance and is provided with a height identical to that of the upper surface of the base layer; a conductive layer 17, in which a base electrode 17a connected to the base layer; an electrode 17b for base contact pad, which is formed on the mesa structural body for base contact pad, in a region excluding the vicinity of a rim part PBMa on the upper surface of the mesa structure body for base contact pad; and a wiring unit 17c for connecting these electrodes, while these components are formed integrally. COPYRIGHT: (C)2005,JPO&NCIPI
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