发明名称 PLASMA PROCESSING APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma processing apparatus having high gas conductance capability, capable of dealing with a wide range of processes, without causing increase in production cost, having the function of preventing the plasma leakage, and capable of performing satisfactory plasma processing with stable plasma. SOLUTION: A discharge ring 16, formed into a circular shape, is provided around a mounting stand 2. This discharge ring 16 is provided with a sidewall portion 17 formed substantially vertically downward, and a bottom portion 18, extending in the vertical direction from the lower end of the side wall portion 17 toward the inside. The sidewall portion 17 consists of an inner cylindrical member 19 and an outer cylindrical member 20, which are concentrically arranged at a predetermined interval, and a discharge path passing through a gap 21 in between these members is formed. COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004327767(A) 申请公布日期 2004.11.18
申请号 JP20030121214 申请日期 2003.04.25
申请人 TOKYO ELECTRON LTD 发明人 HAYASHI DAISUKE;NAGASEKI KAZUYA
分类号 B01J3/00;B01J3/02;B01J19/08;C23C16/44;H01L21/205;H01L21/3065;(IPC1-7):H01L21/306 主分类号 B01J3/00
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