发明名称 METHOD OF FORMING A REFERENCE VOLTAGE AND STRUCTURE THEREFOR
摘要 <p>A selected bandgap reference (11) of a voltage generator (10) is operated at a duty cycle that is less than one hundred per cent. The seclectable bandgap reference (11) has at a high current consumption when enabled and a low current consumption when disabled. The output voltage of the selectable bandgap reference (11) is stored on a storage element (13) when the selectable bandgap reference (11) is enabled. A high impedance amplifier (16) receives the stored voltage and generates the reference voltage.</p>
申请公布号 WO2004099892(A1) 申请公布日期 2004.11.18
申请号 WO2003US12082 申请日期 2003.04.18
申请人 SEMICONDUCTOR COMPONENTS INDUSTRIES L.L.C.;MIGLIAVACCA, PAOLO 发明人 MIGLIAVACCA, PAOLO
分类号 G05F3/30;(IPC1-7):G05F3/30 主分类号 G05F3/30
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