发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device that can be realized without increasing the chip size by preventing the deterioration of the circuit characteristics of an analog circuit disposed on a semiconductor substrate (semiconductor chip), even when a channel potential transiently becomes lower than a ground potential or higher than a power-supply potential due to the feed through current of a digital circuit disposed on the same semiconductor substrate (semiconductor chip) as that of the analog circuit section; and to provide a CCD camera provided with the integrated circuit device. SOLUTION: The semiconductor integrated circuit device is provided with the digital circuit 2 and analog circuit 3 formed on the surface of the same semiconductor substrate 1 and a dummy polysilicon layer 4 constituting the gate of a transistor between the circuits 2 and 3. COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004327525(A) |
申请公布日期 |
2004.11.18 |
申请号 |
JP20030116866 |
申请日期 |
2003.04.22 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
OTANI MICHIHIKO |
分类号 |
H01L21/822;H01L21/761;H01L23/58;H01L27/04;H01L27/092;H01L27/146;H01L27/148;(IPC1-7):H01L21/822 |
主分类号 |
H01L21/822 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|