| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a polishing solution which can polish at a sufficiently working speed with an excellent surface accuracy without using a bromine polishing solution in mirror polishing of a III-V compound semiconductor wafer, and to provide a method for polishing the wafer using the same. <P>SOLUTION: The polishing solution for the III-V compound semiconductor wafer contains a silica having two types of particle sizes of rough and fine particles, a sodium dichloroisocyanurate, a sodium sulfate, a tripoli sodium phosphate, a sodium carbonate and a citric acid mixed in water. The method for polishing the wafer uses the polishing solution. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
