| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having reliability of wiring improved. SOLUTION: A power device 1 is provided with drain lines 35, into which currents to be supplied to field effect transistors (FETs) are allowed to flow and source lines 25, extends in parallel with the drain lines 35 so that currents are allowed to flow from the FETs. Each of the drain lines 35 and each of the source lines 25 respectively include one ends 35a, 25a which are located on the upstream side of a current flowing direction and the other ends 35b, 25b located on the downstream side. Each drain line 35 is formed so that the electrical resistance value per unit length increases, in a direction from one end 35a to the other end 35b. Each source line 25 is formed so that the electrical resistance value per unit length becomes smaller, along the direction from one end 25a to the other end 25b. COPYRIGHT: (C)2005,JPO&NCIPI
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