| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a crystalline semiconductor film having high reliability with sufficiently reduced content of catalytic elements. SOLUTION: The method for manufacturing a semiconductor film comprises steps of preparing a first semiconductor film 104b containing the catalytic elements for accelerating crystallization of an amorphous semiconductor film 104, providing a second semiconductor film 107 to be in contact with an upper part of the first semiconductor film 104b, transferring the catalytic elements present in the first semiconductor film 104b to the second semiconductor film 107 by giving a first heat treatment to the first semiconductor film 104b, oxidizing the second semiconductor film 107, and removing an oxidized second semiconductor film 109. COPYRIGHT: (C)2005,JPO&NCIPI
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