| 摘要 |
Described is a semiconductor device having a silicon oxide (SiO2) film into which nitrogen atoms, in a range between approximately 2x10<20 >atoms/cm<3 >or more and 2x10<21 >atoms/cm<3 >or less, are introduced, used as an insulator film in the semiconductor device. For example, the device can be a nonvolatile memory device, and the silicon oxide film can be used as an insulator film between, e.g., a floating gate electrode and control gate electrode of the nonvolatile memory device. Stable operations and a retention capability of a nonvolatile memory device are obtained even if the nonvolatile memory device is scaled. Moreover, a programming voltage can be lowered. Also described are methods of fabricating the semiconductor device.
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