| 发明名称 |
High speed composite p-channel Si/SiGe heterostructure for field effect devices |
| 摘要 |
A layered structure for forming electronic devices thereon is provided. The layered structure includes an over-shoot layer, Si1-yGey, within a relaxed Si1-xGex layer, wherein y=X+Z and Z is in the range from 0.01 to 0.1 and X is from 0.35 to 0.5. The over-shoot layer has a thickness that is less than its critical thickness.
|
| 申请公布号 |
US2004227154(A1) |
申请公布日期 |
2004.11.18 |
| 申请号 |
US20040832217 |
申请日期 |
2004.04.26 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHU JACK OON;HAMMOND RICHARD;ISMAIL KHALID EZZELDIN;KOESTER STEVEN JOHN;MOONEY PATRICIA MAY;OTT JOHN A. |
| 分类号 |
H01L29/161;H01L21/338;H01L29/10;H01L29/778;H01L29/78;H01L29/812;(IPC1-7):H01L29/06 |
主分类号 |
H01L29/161 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
