| 摘要 |
PROBLEM TO BE SOLVED: To provide an apparatus and a method for manufacturing an epitaxial wafer having a stable epitaxy layer. SOLUTION: The parts which can heat portions of quartz parts existing nearer the upstream side of a gaseous raw material stream than a susceptor to a high temperature and the parts which are made into a high temperature particularly by induction heating are formed, by which reaction products are removed during a cleaning process and therefore the deposition of the reaction products is suppressed. Also, a cleaning effect is enhanced and the deposition of the reaction products is suppressed by providing the apparatus with an auxiliary heater for heating the portions where the reaction products deposit on the quartz parts only during the cleaning process. COPYRIGHT: (C)2005,JPO&NCIPI
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