发明名称 |
Semiconductor memory device, semiconductor device, and portable electronic apparatus |
摘要 |
A semiconductor memory device includes a nonvolatile memory section; and a volatile memory section, wherein the nonvolatile memory section includes a nonvolatile memory cell having a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function for retaining charges.
|
申请公布号 |
US2004228200(A1) |
申请公布日期 |
2004.11.18 |
申请号 |
US20040826612 |
申请日期 |
2004.04.19 |
申请人 |
SHIBATA AKIHIDE;IWATA HIROSHI |
发明人 |
SHIBATA AKIHIDE;IWATA HIROSHI |
分类号 |
G11C16/04;G11C5/00;H01L21/336;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/11;H01L27/115;H01L27/12;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C5/00 |
主分类号 |
G11C16/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|