发明名称 Semiconductor memory device, semiconductor device, and portable electronic apparatus
摘要 A semiconductor memory device includes a nonvolatile memory section; and a volatile memory section, wherein the nonvolatile memory section includes a nonvolatile memory cell having a gate electrode formed on a semiconductor layer via a gate insulating film, a channel region disposed under the gate electrode, diffusion regions disposed on both sides of the channel region and having a conductive type opposite to that of the channel region, and memory functional units formed on both sides of the gate electrode and having a function for retaining charges.
申请公布号 US2004228200(A1) 申请公布日期 2004.11.18
申请号 US20040826612 申请日期 2004.04.19
申请人 SHIBATA AKIHIDE;IWATA HIROSHI 发明人 SHIBATA AKIHIDE;IWATA HIROSHI
分类号 G11C16/04;G11C5/00;H01L21/336;H01L21/8246;H01L21/8247;H01L27/10;H01L27/105;H01L27/108;H01L27/11;H01L27/115;H01L27/12;H01L29/423;H01L29/788;H01L29/792;(IPC1-7):G11C5/00 主分类号 G11C16/04
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