| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of polishing even a substrate, where Ultralow-k material whose permittivity is two or below is used as insulating material, very well. <P>SOLUTION: The substrate where a wiring pattern is formed between materials having permittivity of two or below is polished with a polishing pressure that is set at 0.01 to 0.2 psi. The substrate where porous material whose permittivity is two or below is used as insulating material is polished with a polishing pad smaller in diameter than the substrate, and a polishing operation is carried out with the macroscopic roughness of the surface of the polishing pad and the macroscopic roughness of the surface of the substrate set at 5 μm or below and 3 μm or below, respectively. The relative speed of the polishing pad to the substrate is set at 6.5 m/sec or below. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
