| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory capable of improving the reliability of data to be saved while suppressing a reduction in writing efficiency. <P>SOLUTION: The memory is provided with a plurality of memory groups in which a plurality of memory cells are serially connected, a plurality of word lines connected to the gate of one memory cell constituting the memory cell group, a detecting means for detecting the conductive or nonconductive state of the memory cell group, a first switch element connected to the detecting means, a data holding means for holding data to be written in the memory cell group, and a second switch element connected to the data holding means. The first switch element is turned ON simultaneously as the second switch element is turned ON, and thus data written in the memory cell selected by the word line from the plurality of memory cell groups is converted into a serial signal. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
