发明名称 Processing chamber for atomic layer deposition processes
摘要 A processing station adaptable to standard cluster tools has a vertically-translatable pedestal having an upper wafer-support surface including a heater plate adapted to be plugged into a unique feedthrough in the pedestal. At a lower position for the pedestal wafers may be transferred to and from the processing station, and at an upper position for the pedestal the pedestal forms an annular pumping passage with a lower circular opening in a processing chamber. A removable, replaceable ring at the lower opening of the processing chamber allows process pumping speed to be tailored for different processes by replacing the ring. In some embodiments the pedestal also has a surrounding shroud defining an annular pumping passage around the pedestal. A unique two-zone heater plate is adapted to the top of the pedestal, and connects to a unique feedthrough allowing heater plates to be quickly and simply replaced. In some embodiments the top of the processing chamber is removable allowing users to remove either pedestals or heater assemblies. Or both, through the open top of a processing station. In preferred embodiments the system is adapted to atomic layer deposition processing.
申请公布号 US6818067(B2) 申请公布日期 2004.11.16
申请号 US20020123293 申请日期 2002.04.15
申请人 GENUS, INC. 发明人 DOERING KENNETH;GALEWSKI CARL J.
分类号 B01J19/00;C23C16/44;C23C16/455;C23C16/458;C23C16/46;C23C16/54;C30B25/12;C30B25/14;H01J37/32;H01L21/00;H01L21/205;(IPC1-7):C23C16/00 主分类号 B01J19/00
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