| 摘要 |
PURPOSE: A method for forming a contact plug of a semiconductor device is provided to reduce contact resistance and thermal budget by growing a silicon epi-layer between an amorphous silicon layer and a substrate. CONSTITUTION: An interlayer dielectric(5) is formed on a silicon substrate(1) with a desired lower structure. A contact hole is formed by selectively etching the interlayer dielectric. The exposed substrate is cleaned and baked. An amorphous silicon layer is deposited on the contact hole. A polysilicon layer(8) is then entirely filled in the contact hole. At this time, a silicon epi-layer(9) is grown at the interface between the substrate and the amorphous silicon layer. The remaining amorphous silicon layer is crystallized.
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