发明名称 Interdigitated capacitor structure for an integrated circuit
摘要 A capacitor has at least two layers of substantially parallel interdigitated strips. The strips of each layer are alternately connected to a first and a second bus. The first and second buses of each layer are interconnected to first and second buses of an adjacent layer. The strips of each layer are approximately perpendicular to strips of an adjacent layer. The capacitor further includes dielectric material between strips of the same and different layers. A method of fabricating the capacitor includes forming at least two layers of substantially parallel interdigitated strips which are alternately connected to first and second buses of each layer. The buses of each layer are connected to the respective buses of an adjacent layer. The strips of one layer are approximately perpendicular to the strips of an adjacent layer. Dielectric material is formed between strips of the same and different layers.
申请公布号 US6819542(B2) 申请公布日期 2004.11.16
申请号 US20030379121 申请日期 2003.03.04
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 TSAI TSE-LUN;CHIA YU-TAI;GUO JC
分类号 H01L21/02;H01L23/522;(IPC1-7):H01G4/012;H01G4/228 主分类号 H01L21/02
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