发明名称 |
REDUNDANCY MODULE OF CMOS IMAGE SENSOR TO REPAIR EFFICIENCY BY RECOVERING REPAIR FAIL WITHOUT PERFORMING ADDITIONAL DEPOSITION PROCESS |
摘要 |
PURPOSE: A redundancy module of a CMOS image sensor is provided to lower an etch selectivity and improve the repair efficiency by adding a switchable substitution fuse pattern in a fuse pattern and forming a fuse pattern with a metal-salicide layer. CONSTITUTION: A redundancy module of a CMOS image sensor includes first to fourth fuse patterns(20A-20D). The first to the fourth patterns are connected to each other by a connection line. In addition, the first to the fourth patterns are arranged in a predetermined interval. The fourth fuse pattern(20D2) is formed with a double pattern. The double pattern is formed with a repair pattern(20D1) opened by a fuse window and a substitution pattern connected to a switch part. Each of the first to the third fuse patterns is formed with a single pattern.
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申请公布号 |
KR20040095883(A) |
申请公布日期 |
2004.11.16 |
申请号 |
KR20030026901 |
申请日期 |
2003.04.29 |
申请人 |
MAGNACHIP SEMICONDUCTOR, LTD. |
发明人 |
LEE, WON HO |
分类号 |
H01L27/146;(IPC1-7):H01L27/146 |
主分类号 |
H01L27/146 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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