发明名称 REDUNDANCY MODULE OF CMOS IMAGE SENSOR TO REPAIR EFFICIENCY BY RECOVERING REPAIR FAIL WITHOUT PERFORMING ADDITIONAL DEPOSITION PROCESS
摘要 PURPOSE: A redundancy module of a CMOS image sensor is provided to lower an etch selectivity and improve the repair efficiency by adding a switchable substitution fuse pattern in a fuse pattern and forming a fuse pattern with a metal-salicide layer. CONSTITUTION: A redundancy module of a CMOS image sensor includes first to fourth fuse patterns(20A-20D). The first to the fourth patterns are connected to each other by a connection line. In addition, the first to the fourth patterns are arranged in a predetermined interval. The fourth fuse pattern(20D2) is formed with a double pattern. The double pattern is formed with a repair pattern(20D1) opened by a fuse window and a substitution pattern connected to a switch part. Each of the first to the third fuse patterns is formed with a single pattern.
申请公布号 KR20040095883(A) 申请公布日期 2004.11.16
申请号 KR20030026901 申请日期 2003.04.29
申请人 MAGNACHIP SEMICONDUCTOR, LTD. 发明人 LEE, WON HO
分类号 H01L27/146;(IPC1-7):H01L27/146 主分类号 H01L27/146
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